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Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR

BC 817K-25 E6433 Infineon Technologies Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR

Brand: Infineon Technologies Product code:BC 817K-25 E6433 Datasheet
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Explanation
Product AttributeAttribute Value
Manufacturer: Infineon
Product Category: Bipolar Transistors - BJT
RoHS:  Details
Mounting Style: SMD/SMT
Package/Case: SOT-23-3
Transistor Polarity: NPN
Configuration: Single
Collector- Emitter Voltage VCEO Max: 45 V
Collector- Base Voltage VCBO: 50 V
Emitter- Base Voltage VEBO: 5 V
Collector-Emitter Saturation Voltage: 700 mV
Maximum DC Collector Current: 500 mA
Pd - Power Dissipation: 500 mW
Gain Bandwidth Product fT: 170 MHz
Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 150 C
Qualification: AEC-Q101
Series: BC 817K
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Brand: Infineon Technologies
Continuous Collector Current: 500 mA
DC Collector/Base Gain hFE Min: 160 at 100 mA, 1 V
DC Current Gain hFE Max: 400 at 100 mA, 1 V
Height: 1 mm
Length: 2.9 mm
Product Type: BJTs - Bipolar Transistors
Factory Pack Quantity: Factory Pack Quantity: 10000
Subcategory: Transistors
Technology: Si
Width: 1.3 mm
Part # Aliases: SP000271879 BC817K25E6433XT BC817K25E6433HTMA1
Unit Weight: 8 mg


BC 817K-25 E6433 with product code You can purchase Infineon Technologies branded Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR product from our company.