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Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR ARRAY

BC 817U E6327 Infineon Technologies Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR ARRAY

Brand: Infineon Technologies Product code:BC 817U E6327 Datasheet
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Explanation
Product AttributeAttribute Value
Manufacturer: Infineon
Product Category: Bipolar Transistors - BJT
RoHS:  Details
Mounting Style: SMD/SMT
Package/Case: SC-74-6
Transistor Polarity: NPN
Configuration: Dual
Collector- Emitter Voltage VCEO Max: 45 V
Collector- Base Voltage VCBO: 50 V
Emitter- Base Voltage VEBO: 5 V
Collector-Emitter Saturation Voltage: 700 mV
Maximum DC Collector Current: 500 mA
Pd - Power Dissipation: 330 mW
Gain Bandwidth Product fT: 170 MHz
Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 150 C
Qualification: AEC-Q101
Series: BC 817U
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Brand: Infineon Technologies
Continuous Collector Current: 500 mA
DC Collector/Base Gain hFE Min: 160
DC Current Gain hFE Max: 400
Height: 1 mm
Length: 2.9 mm
Product Type: BJTs - Bipolar Transistors
Factory Pack Quantity: Factory Pack Quantity: 3000
Subcategory: Transistors
Technology: Si
Width: 1.6 mm
Part # Aliases: BC817UE6327XT SP000012394 BC817UE6327HTSA1
Unit Weight: 12,250 mg


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