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MOSFET TRENCH <= 40V

BSG0811ND Infineon Technologies MOSFET TRENCH <= 40V

Brand: Infineon Technologies Product code:BSG0811ND Datasheet
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Explanation
Product AttributeAttribute Value
Manufacturer: Infineon
Product Category: MOSFET
RoHS:  Details
Technology: Si
Mounting Style: SMD/SMT
Package/Case: TISON-8
Transistor Polarity: N-Channel
Number of Channels: 2 Channel
Vds - Drain-Source Breakdown Voltage: 25 V
Id - Continuous Drain Current: 50 A, 50 A
Rds On - Drain-Source Resistance: 2.4 mOhms, 3.2 mOhms
Vgs - Gate-Source Voltage: - 16 V, + 16 V
Vgs th - Gate-Source Threshold Voltage: 1.6 V
Qg - Gate Charge: 5.6 nC, 20 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 2.5 W, 6.25 W
Channel Mode: Enhancement
Tradename: OptiMOS
Series: OptiMOS 5
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Brand: Infineon Technologies
Configuration: Dual
Fall Time: 1.4 ns, 2.6 ns
Forward Transconductance - Min: 46 S, 90 S
Height: 1.15 mm
Length: 6 mm
Product Type: MOSFET
Rise Time: 4.7 ns, 4.3 ns
Factory Pack Quantity: Factory Pack Quantity: 5000
Subcategory: MOSFETs
Transistor Type: 2 N-Channel
Typical Turn-Off Delay Time: 4.3 ns, 8.8 ns
Typical Turn-On Delay Time: 4.3 ns, 5.6 ns
Width: 5 mm
Part # Aliases: SP001075902 BSG0811NDATMA1
Unit Weight: 230 mg


BSG0811ND with product code You can purchase Infineon Technologies branded MOSFET TRENCH <= 40V product from our company.