| Product Attribute | Attribute Value |
|---|---|
| Manufacturer: | Infineon |
| Product Category: | MOSFET |
| RoHS: | Details |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package/Case: | SOT-23-3 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Id - Continuous Drain Current: | 190 mA |
| Rds On - Drain-Source Resistance: | 2.4 Ohms |
| Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.4 V |
| Qg - Gate Charge: | 600 pC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 500 mW |
| Channel Mode: | Enhancement |
| Qualification: | AEC-Q101 |
| Packaging: | Reel |
| Brand: | Infineon Technologies |
| Configuration: | Single |
| Fall Time: | 22 ns |
| Forward Transconductance - Min: | 410 mS |
| Height: | 1.1 mm |
| Length: | 2.9 mm |
| Product Type: | MOSFET |
| Rise Time: | 3.2 ns |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Subcategory: | MOSFETs |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 7.4 ns |
| Typical Turn-On Delay Time: | 2.3 ns |
| Width: | 1.3 mm |
| Part # Aliases: | SP000870646 BSS123N H6327 BSS123NH6327XTSA1 |
| Unit Weight: | 8 mg |
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