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MOSFET P-Ch -40V -70A D2PAK-2 OptiMOS-P2

IPB70P04P4-09 Infineon Technologies MOSFET P-Ch -40V -70A D2PAK-2 OptiMOS-P2

Brand: Infineon Technologies Product code:IPB70P04P4-09 Datasheet
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Explanation
Product AttributeAttribute Value
Manufacturer: Infineon
Product Category: MOSFET
RoHS:  Details
Technology: Si
Mounting Style: SMD/SMT
Package/Case: TO-263-3
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 40 V
Id - Continuous Drain Current: 70 A
Rds On - Drain-Source Resistance: 9.1 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 4 V
Qg - Gate Charge: 54 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 75 W
Channel Mode: Enhancement
Qualification: AEC-Q101
Tradename: OptiMOS
Series: OptiMOS-P2
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Brand: Infineon Technologies
Configuration: Single
Fall Time: 31 ns
Height: 4.4 mm
Length: 10 mm
Product Type: MOSFET
Rise Time: 15 ns
Factory Pack Quantity: Factory Pack Quantity: 1000
Subcategory: MOSFETs
Transistor Type: 1 P-Channel
Typical Turn-Off Delay Time: 24 ns
Typical Turn-On Delay Time: 19 ns
Width: 9.25 mm
Part # Aliases: SP000735964 IPB7P4P49XT IPB70P04P409ATMA1
Unit Weight: 4 g


IPB70P04P4-09 with product code You can purchase Infineon Technologies branded MOSFET P-Ch -40V -70A D2PAK-2 OptiMOS-P2 product from our company.