Product Attribute | Attribute Value |
---|---|
Manufacturer: | Infineon |
Product Category: | MOSFET |
RoHS: | Details |
Technology: | Si |
Mounting Style: | SMD/SMT |
Package/Case: | TO-263-3 |
Transistor Polarity: | P-Channel |
Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 40 V |
Id - Continuous Drain Current: | 70 A |
Rds On - Drain-Source Resistance: | 9.1 mOhms |
Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: | 4 V |
Qg - Gate Charge: | 54 nC |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 175 C |
Pd - Power Dissipation: | 75 W |
Channel Mode: | Enhancement |
Qualification: | AEC-Q101 |
Tradename: | OptiMOS |
Series: | OptiMOS-P2 |
Packaging: | Reel |
Packaging: | Cut Tape |
Packaging: | MouseReel |
Brand: | Infineon Technologies |
Configuration: | Single |
Fall Time: | 31 ns |
Height: | 4.4 mm |
Length: | 10 mm |
Product Type: | MOSFET |
Rise Time: | 15 ns |
Factory Pack Quantity: Factory Pack Quantity: | 1000 |
Subcategory: | MOSFETs |
Transistor Type: | 1 P-Channel |
Typical Turn-Off Delay Time: | 24 ns |
Typical Turn-On Delay Time: | 19 ns |
Width: | 9.25 mm |
Part # Aliases: | SP000735964 IPB7P4P49XT IPB70P04P409ATMA1 |
Unit Weight: | 4 g |
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