| Product Attribute | Attribute Value |
|---|---|
| Manufacturer: | Infineon |
| Product Category: | MOSFET |
| RoHS: | Details |
| Technology: | Si |
| Mounting Style: | Through Hole |
| Package/Case: | TO-262-3 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Id - Continuous Drain Current: | 120 A |
| Rds On - Drain-Source Resistance: | 2.3 mOhms |
| Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 175 C |
| Pd - Power Dissipation: | 300 W |
| Channel Mode: | Enhancement |
| Qualification: | AEC-Q101 |
| Tradename: | OptiMOS |
| Series: | OptiMOS-T |
| Packaging: | Tube |
| Brand: | Infineon Technologies |
| Configuration: | Single |
| Fall Time: | 18 ns |
| Height: | 9.45 mm |
| Length: | 10.2 mm |
| Product Type: | MOSFET |
| Rise Time: | 19 ns |
| Factory Pack Quantity: Factory Pack Quantity: | 500 |
| Subcategory: | MOSFETs |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 57 ns |
| Typical Turn-On Delay Time: | 35 ns |
| Width: | 4.5 mm |
| Part # Aliases: | IPI12N4S32XK SP000261225 IPI120N04S302AKSA1 |
| Unit Weight: | 2,387 g |
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