Product Attribute | Attribute Value |
---|---|
Manufacturer: | Infineon |
Product Category: | MOSFET |
RoHS: | Details |
Technology: | Si |
Mounting Style: | Through Hole |
Package/Case: | TO-247-3 |
Transistor Polarity: | N-Channel |
Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 500 V |
Id - Continuous Drain Current: | 32 A |
Rds On - Drain-Source Resistance: | 110 mOhms |
Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: | 2.1 V |
Qg - Gate Charge: | 170 nC |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 284 W |
Channel Mode: | Enhancement |
Tradename: | CoolMOS |
Series: | CoolMOS C3 |
Packaging: | Tube |
Brand: | Infineon Technologies |
Configuration: | Single |
Fall Time: | 10 ns |
Height: | 21.1 mm |
Length: | 16.13 mm |
Product Type: | MOSFET |
Rise Time: | 30 ns |
Factory Pack Quantity: Factory Pack Quantity: | 240 |
Subcategory: | MOSFETs |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 100 ns |
Typical Turn-On Delay Time: | 20 ns |
Width: | 5.21 mm |
Part # Aliases: | SPW32N5C3XK SP000014625 SPW32N50C3FKSA1 |
Unit Weight: | 6 g |
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